Tranzystory krzemowe TESLI * "Zrób Sam 87/06" + rysunki obudów Tranzystory PNP maīej czėstotliwoōci ------------------------------------------------------------------------------------------------------ |Typ | Param.graniczne | Param.charakterystyczne |Obudowa|Odpowiednik| | |Ucbo |Uceo|Uebo| Ic |Ptot| tj |Ices Uces|h21e Uce| Ie | f |fr |Fmax| | | | |Uces*| | | | | |Icbo*Ucb*|h21E* | | | min | | | | | | [V] |[V] |[V] |[mA]|[mW]|[°C]|[nA] [V] | [V]|[mA]|[kHz]|[MHz]|[dB]| | | |------+-----+----+----+----+----+----|---------+------------+----+-----+-----+----+-------+-----------| |KC307A| 50* | 45 | 5 | 100| 300| 150| 15 | 50 |120÷220*| 5 | 2 | - | 150 | 10²| T16 |BC307 | |KC307B| 50* | 45 | 5 | 100| 300| 150| 15 | 50 |180÷460*| 5 | 2 | - | 150 | 10²| T16 |BC307 | |KC307V| 64* | 64 | 5 | 100| 300| 150| 15 | 64 | 30÷150*| 5 | 2 | - | 150 | 10²| T16 |BC307 | |------+-----+----+----+----+----+----+----+----+--------+---+ ---+-----+-----+----+-------+-----------| |KC308A| 30* | 25 | 5 | 100| 300| 150| 15 | 30 |120÷220*| 5 | 2 | - | 150 | 10²| T16 |BC308 | |KC308B| 30* | 25 | 5 | 100| 300| 150| 15 | 30 |180÷460*| 5 | 2 | - | 150 | 10²| T16 |BC308 | |KC308C| 30* | 25 | 5 | 100| 300| 150| 15 | 30 |380÷800*| 5 | 2 | - | 150 | 10²| T16 |BC308 | |------+-----+----+----+----+----+----+----+----+--------+---+ ---+-----+-----+----+-------+-----------| |KC309B| 25* | 20 | 5 | 50| 300| 150| 15 | 25 |180÷460*| 5 | 2 | - | 150 | 4²| T16 |BC309 | |KC309C| 25* | 20 | 5 | 50| 300| 150| 15 | 25 |380÷800*| 5 | 2 | - | 150 | 2²| T16 |BC309 | |KC309F| 25* | 20 | 5 | 50| 300| 150| 15 | 25 |300÷800*| 5 | 2 | - | 150 | 2¹| T16 |BC309 | |------+-----+----+----+----+----+----+----+----+--------+---+ ---+-----+-----+----+-------+-----------| |KC636 | 45* | 45 | 5 |1000| 800| 150|100*| 30*| 40÷300*| 2 |150 | - | 50 | - | T16 |BC636 | |KC638 | 60* | 60 | 5 |1000| 800| 150|100*| 30*| 40÷160*| 2 |150 | - | 50 | - | T16 |BC638 | |KC640 |100* |100 | 5 |1000| 800| 150|100*| 30*| 40÷160*| 2 |150 | - | 50 | - | T16 |BC640 | ------------------------------------------------------------------------------------------|----------- ¹-Uce=5V, Ic=0,2mA, Rg=2kOM, f=30..15000Hz ²-Uce=5V, Ic=0,2mA, Rg=2kOM, f=200Hz Tranzystory NPN maīej czėstotliwoōci ------------------------------------------------------------------------------------------------------ |Typ | Param.graniczne | Param.charakterystyczne |Obudowa|Odpowiednik| | |Ucbo |Uceo|Uebo| Ic |Ptot| tj |Ices*Uces|h21e Uce| Ie | f |fr |Fmax| | | | |Uces*| | | | | |Icbo Ucb |h21E* | | | min | | | | | | [V] |[V] |[V] |[mA]|[mW]|[°C]|[nA] [V] | [V]|[mA]|[kHz]|[MHz]|[dB]| | | |------+-----+----+----+----+----+----|---------+------------+----+-----+-----+----+-------+-----------| |KC147 | 45 | 45 | 5 | 100|200¹| 125| 15 | 45 |125÷500 | 5 | 2 | 1 | 150 | 10³| T28 | | |KC148 | 20 | 20 | 5 | 100|200¹| 125| 15 | 20 |125÷900 | 5 | 2 | 1 | 150 | 10³| T28 | | |KC149 | 20 | 20 | 5 | 100|200¹| 125| 15 | 20 |240÷900 | 5 | 2 | 1 | 150 | 4²| T28 | | |KC237A| 50* | 45 | 6 | 100|300 | 150| 15*| 50*|120÷220*| 5 | 2 | - | 150 | 10³| T16 |BC237 | |KC237B| 50* | 45 | 6 | 100|300 | 150| 15*| 50*|180÷460*| 5 | 2 | - | 150 | 10³| T16 |BC237 | |KC237V| 70* | 64 | 6 | 100|300 | 150| 15*| 70*| 30÷150*| 5 | 2 | - | 150 | 10³| T16 |BC237 | |KC238A| 30* | 20 | 5 | 100|300 | 150| 15*| 30*|120÷220*| 5 | 2 | - | 150 | 10³| T16 |BC238 | |KC238B| 30* | 20 | 5 | 100|300 | 150| 15*| 30*|180÷460*| 5 | 2 | - | 150 | 10³| T16 |BC238 | |KC238C| 30* | 20 | 5 | 100|300 | 150| 15*| 30*|380÷800*| 5 | 2 | - | 150 | 10³| T16 |BC238 | |KC239B| 30* | 20 | 5 | 50|300 | 150| 15*| 30*|180÷460*| 5 | 2 | - | 150 | 4³| T16 |BC239 | |KC239C| 30* | 20 | 5 | 50|300 | 150| 15*| 30*|380÷800*| 5 | 2 | - | 150 | 4³| T16 |BC239 | |KC239F| 30* | 20 | 5 | 50|300 | 150| 15*| 30*|300÷800*| 5 | 2 | - | 150 | 2²| T16 |BC239 | |KC507 | 45 | 45 | 5 | 100|300 | 175| 15 | 45 |125÷500 | 5 | 2 | 1 | 150 | 10³| T11 | | |KC508 | 20 | 20 | 5 | 100|300 | 175| 15 | 20 |125÷900 | 5 | 2 | 1 | 150 | 10³| T11 | | |KC509 | 20 | 20 | 5 | 100|300 | 175| 15 | 20 |240÷900 | 5 | 2 | 1 | 150 | 4²| T11 | | |KC635 | 45* | 45 | 5 |1000|800 | 150|100 | 30 | 40÷300 | 2 |150 | - | 50 | - | T16 |BC635 | |KC637 | 60* | 60 | 5 |1000|800 | 150|100 | 30 | 40÷160*| 2 |150 | - | 50 | - | T16 |BC637 | |KC639 |100* | 80 | 5 |1000|800 | 150|100 | 30 | 40÷160*| 2 |150 | - | 50 | - | T16 |BC639 | ------------------------------------------------------------------------------------------------------ ¹-Uce=5V, Ic=0,2mA, Rg=2kOM, f=30..15000Hz ²-Uce=5V, Ic=0,2mA, Rg=2kOM, f=1kHz, f=200Hz Tranzystory NPN wielkiej czėstotliwoōci i impulsowe ----------------------------------------------------------------------------------------- |Typ | Param.graniczne | Param.charakterystyczne |Obudowa| | |Ucbo |Ucer|Uebo| Ic | Ptot‘ | tj |Icbo Uce |h21e* Ucb| Ie | f |fr | | | | | | | | | | |h21E | Ic*| | min | | | | [V] |[V] |[V] |[mA]| [mW] |[°C]|[µA] [V] | [V]|[mA]|[MHz]|[MHz]| | |------+-----+----+----+----+-------+----|----------+------------+----+-----+-----+-------| |KF124 | 30 | 20 | 5 | 30 | 220 | 125|0,0008| 10|67÷220 | 10 | 1 | - | 350 | T28 | |KF125 | 30 | 20 | 5 | 30 | 220 | 125|0,0008| 10|37÷125 | 10 | 1 | - | 250 | T28 | |KF422 |250 |250 | 5 | 25 | 830 | 150|0,01 |200|>50 | 20 | 25 | - | >60 | T16 | |KF469 |250 |250 | 5 | 30 | 2W¹ | 150|0,01 |200|>50 | 20 | 25 | - | >60 | T48 | |KF503 | - |100²| 5 | 50 | 700 | 175|0,5 | 50|100 | 10 | 30 | - | - | T18 | | | | | | |2500’ | | | |>3* | 10 | 10 | 30 | 150 | | |KF504 | - |160²| 5 | 50 | 700 | 175|0,1 |140|>3* | 10 | 10 | 30 | 150 | T18 | | | | | | |2500’ | | | |100 | 10 | 30 | | | | |KF506 | 75 | 50³| 7 |500 | 800 | 200|0,01 | 60|35÷125 | 10 | 10 | - | - | T18 | | | | | | |2500’ | | | | | 10 | 50 | 30 | >60 | | |KF507 | 40 | 32³| 5 |500 | 800 | 200|0,5 | 30|>35 | 10 | 10 | - | - | T18 | | | | | | |2500’ | | | | | 10 | 50 | 30 | >50 | | |KF508 | 75 | 50³| 7 |500 | 800 | 200|0,01 | 60|90÷300 | 10 | 10 | - | - | T18 | | | | | | |2500’ | | | | | 10 | 50 | 30 | >70 | | |KF508A| 75 | 50³| 7 |500 | 800 | 200|0,01 | 60|133÷500| 10 | 10 | - | - | T18 | | | | | | |2500’ | | | | | 10 | 50 | 30 | >70 | | |KF509 | 75 | 50³| 7 |500 | 800 | 200|0,05 | 60|90÷300 | 10 | 10 | - | - | T18 | | | | | | |2500’ | | | | | 10 | 50 | 30 | >60 | | |KF524 | 30 | 20 | 5 | 30 | 145 | 175|0,0008| 10|67÷220 | 10 | 1 | - | 350 | T12 | |KF525 | 30 | 20 | 5 | 30 | 145 | 175|0,0008| 10|37÷125 | 10 | 1 | - | 300 | T12 | |KS500 | 25 | 14 | 5 |200 |1000'’| 200|0,5 | 15|20 | 1 | 10 | - | - | T11 | | | | | | | 300 | | | | | 10 | 10 | |>200 | | ----------------------------------------------------------------------------------------- ¹-tamb<=110°C ²-Rse=0OM ³-Rse=<=10OM -tcase<45°C ‘-tamb=25°C ’-przy idealnym chīodzeniu Uce=0÷10V Tranzystory NPN wielkiej czėstotliwoōci ------------------------------------------------------------------------------------------ |Typ | Param.graniczne | Param.charakterystyczne |Obudowa| | |Ucbom|Uceo|Uebo| Ic |Ptot | tj |Icbo Ucbo|Gp Uce| Ic | f | F | fr | | | | | | | | | | | | | | | | | | | [V] |[V] |[V] |[mA]|[mW] |[°C]|[nA] [V] |[dB] [V]|[mA]|[MHz]|[dB] |[GHz]| | |-----+-----+----+----+----+-----+----|----------+----------+----+-----+-----+-----+-------| |KF589| 30 | 15 | 2,5| 25 | 200 | 200| 10 | 15 |>14 | 10 | 14 | 200 | <5 | 0,9 | T8/1 | | | | | | | | | | |> 4 | 10 | 14 | 200 | | | | |KF590| 30 | 15 | 2,5| 25 | 200 | 200| 10 | 15 |>16 | 10 | 14 | 200 | <4 | 1,0 | T8/1 | | | | | | | | | | |> 5,5| 10 | 14 | 200 | | | | ------------------------------------------------------------------------------------------ OZNACZENIA: F - wspóīczynnik szumów f - czėstotliwoōź fr- czėstotliwoōź graniczna przy h21e=1 Gp- wzmocnienie mocy h21e- maīosygnaīowy zwarciowy wspóīczynnik wzmocnienia prādowego w ukīadzie wspólnego emitera h21E- statyczny wspóīczynnik wzmocnienia prādowego w ukīadzie wspólnego emitera |h21e|- wartoōź bezwzglėdna statycznego wspóīczynnika wzmocnienia prādowego w ukīadzie wspólnego emitera Icbo- prād staīy w ukīadzie wspólnej bazy przy Ie=0 Ic - prād staīy kolektora Ice - prād kolektor-emiter Ices- prād kolektor-emiter, gdy baza jest zwarta z kolektorem Icem- prād kolektora, wartoōź szczytowa Ie - prād staīy emitera Pc - Moc strat w kolektorze Ptot- moc caīkowita Rbe - wartoōź rezystora zewnėtrznego pomiėdzy bazā a emiterem Rg - rezystacja generatora Ucb - napiėcie staīe kolektor-baza Ucbo- napiėcie staīe kolektor-baza przy rozwartym emiterze Ucbom- napiėcie staīe kolektor-baza przy rozwartym emiterze, wartoōź szczytowa Uce - napiėcie staīe kolektor-emiter Uceo- napiėcie staīe kolektor-emiter przy rozwartej bazie Ucer- napiėcie staīe kolektor-emiter z rezystorem pomiėdzy bazā a emiterzem Uces- napiėcie staīe kolektor-emiter, gdy baza jest zwarta z kolektorem Uebo- napiėcie staīe emiter-baza przy rozwartym kolektorze tcase-temperatura obudowy tj - temperatura zīācza tamb- temperatura otoczenia